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 NUP46V8P5 Low Capacitance Quad Array for ESD Protection
This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection. It is intended to be used in sensitive equipment such as wireless headsets, PDAs, digital cameras, computers, printers, communication systems, and other applications. The integrated design provides very effective and reliable protection for four separate lines using only one package. This device is ideal for situations where board space is at a premium.
Features http://onsemi.com
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5
* * * * * * * * * * * * * *
ESD Protection: IEC61000-4-2: Level 4 Four Separate Unidirectional Configurations for Protection Low Leakage Current < 1 mA @ 3 V Small SOT-953 SMT Package Low Capacitance This is a Pb-Free Device Provides Protection for ESD Industry Standards: IEC 61000, HBM Protects Four Lines Against Transient Voltage Conditions Minimize Power Consumption of the System Minimize PCB Board Space Cellular and Portable Electronics Serial and Parallel Ports Microprocessor Based Equipment Notebooks, Desktops, Servers
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Benefits
SOT-953 CASE 526AB
MARKING DIAGRAM
6M 1 6 = Specific Device Code M = Date Code
Typical Applications
ORDERING INFORMATION
Device NUP46V8P5T5G Package SOT-953 (Pb-Free) Shipping 8000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2008
1
January, 2008 - Rev. 0
Publication Order Number: NUP46V8P5/D
NUP46V8P5
ELECTRICAL CHARACTERISTICS
(TA = 25C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT QVBR IF VF ZZT IZK ZZK Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Temperature Coefficient of VBR Forward Current Forward Voltage @ IF Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK VC VBR VRWM IF
I
IR VF IT
V
IPP
Uni-Directional
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Characteristic Peak Power Dissipation (8 X 20 ms @ TA = 25C) (Note 1) Thermal Resistance Junction-to-Ambient Above 25C, Derate Maximum Junction Temperature Operating Junction and Storage Temperature Range Lead Solder Temperature (10 seconds duration) Human Body Model (HBM) Machine Model (MM) Symbol PPK RqJA TJmax TJ Tstg TL ESD Value 10 560 4.5 150 -55 to +150 260 8000 400 Unit W C/W mW/C C C C V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25C)
Breakdown Voltage VBR @ 1 mA (Volts) Min 6.47 Nom 6.8 Max 7.14 Leakage Current IRM @ VRM VRWM 4.3 IRWM (mA) 1.0 Typ Capacitance @ 0 V Bias (pF) (Note 2) Typ 12 Max 15 Typ Capacitance @ 3 V Bias (pF) (Note 2) Typ 6.7 Max 9.5
Device NUP46V8P5
Device Marking 6
1. Non-repetitive current per Figure 1. 2. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25C.
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NUP46V8P5
TYPICAL ELECTRICAL CHARACTERISTICS
10 TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY -50 0 50 100 150 200 IR, REVERSE LEAKAGE (mA) 14 12 10 8 6 4 2 0 0 1 2 3 BIAS VOLTAGE (V)
1
0.1 -100
T, TEMPERATURE (C)
Figure 1. Reverse Leakage versus Temperature
100 % OF PEAK PULSE CURRENT 90 80 70 60 50 40 30 20 10 0 0.001 0 20 40 t, TIME (ms) 60 80 0.6 0.8 tP 1 IF, FORWARD CURRENT (A)
Figure 2. Capacitance
tr
PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms
0.1
0.01
TA = 25C 1.0 1.2 1.4 1.6 1.8
VF, FORWARD VOLTAGE (V)
Figure 3. 8 x 20 ms Pulse Waveform
110 100 % OF RATED POWER OR IPP 90 80 70 60 50 40 30 20 10 0
Figure 4. Forward Voltage
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (C)
Figure 5. Power Derating Curve
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NUP46V8P5
PACKAGE DIMENSIONS
SOT-953 CASE 527AB-01 ISSUE O
A D 5 12 e b
5X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN NOM MAX 0.44 0.48 0.50 0.10 0.15 0.20 0.05 0.10 0.15 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 INCHES MIN NOM MAX 0.017 0.019 0.020 0.0039 0.0059 0.0079 0.002 0.004 0.006 0.037 0.039 0.041 0.03 0.032 0.034 0.014 BSC 0.0019 0.0039 0.0059 0.037 0.039 0.041
-Y-X4 E 3
L
HE
DIM A b C D E e L HE
C 0.08 X Y
SOLDERING FOOTPRINT*
0.35 0.014 0.35 0.014
0.90 0.0354
0.20 0.08
0.20 0.08
SCALE 20:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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NUP46V8P5/D


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